Input Frequency
Output Frequency
Noise Temperature
Gain
Gain Flatness
RF Band Pass Filter
Output VSWR
1-dB Compression Point
3rd Order Intercept Point
LO Frequency
LO Frequency Stability
Phase Noise


DC Feed
Current
Operating Temperature
Input Interface
Output Interface
Finish
Physical Size
Weight
P-HEMT Technology

3.4 to 4.2 GHz
950 to 1750 MHz
17°K to 20°K @ 25°C
65 dB Typical
±1.5 dB Max
Yes
2.0:1 Typical, 75 ohm
+10 dBm Min
+20 dBm Min
5150 MHz
±500 KHz Typical; -40°C to +60°C
-73 dBc/Hz @ 1 KHz
-95 dBc/Hz @ 10 KHz
-110 dBc/Hz @ 100 KHz
+16 to 28 VDC
210 mA Max
-40°C to +60°C
Flange, WR 229G
75 Ohm, Type "F" Female Gold Plated
Powder Coat
4 x 3.1 x 6.0 inches
16 oz.
High Electron Mobility Transistor